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 Silicon MOS FETs (Small Signal)
2SK1374
Silicon N-Channel MOS FET
For switching
unit: mm
2.10.1
s Features
q High-speed switching q Wide frequency band q Incorporating a built-in gate protection-diode q Allowing 2.5V drive
0.65
0.425
1.250.1
0.425
1
2.00.2
1.30.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25C)
0.90.1
Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature
VDS VGSO ID IDP PD Tch Tstg
50 10 50 100 150 150 -55 to +150
V V mA mA mW C C
0.70.1
0 to 0.1
0.20.1
1: Gate 2: Source 3: Drain
EIAJ: SC-70 S-Mini Type Package (3-pin)
Marking Symbol: 4V
s Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff
*2 *1
Conditions VDS = 20V, VGS = 0 VGS = 10V, VDS = 0 ID = 10A, VGS = 0 ID = 100A, VDS = 5V ID = 10mA, VGS = 2.5V ID = 10mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 2.5V, RL = 470 VDD = 5V, VGS = 2.5 to 0V, RL = 470
min
typ
max 1 1
0.15-0.05
+0.1
Parameter
Symbol
Ratings
Unit
0.2
0.3-0
+0.1
Unit A A V
50 0.5
100 0.8 27 1.1 50
V mS pF pF pF s s
20
39 4.5 4.1 1.2 0.2 0.2
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time
*1 *2
Pulse measurement ton, toff measurement circuit
Vout 470 Vin VDD = 5V Vout 10% 10% 90% ton toff 90%
50
100F
VGS = 2.5V
1
Silicon MOS FETs (Small Signal)
PD Ta
240 48
2SK1374
ID VDS
60
| Yfs | VGS
Forward transfer admittance |Yfs| (mS)
Ta=25C VDS=5V f=1kHz Ta=25C
Allowable power dissipation PD (mW)
200
40
50
160
Drain current ID (mA)
32
VGS=1.8V
40
120
24 1.6V 16
30
80
1.4V 1.2V 1.0V
20
40
8
10
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10 12
0 0 1 2 3 4 5 6
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
12 120
ID VGS
VDS=5V
RDS(on) VGS
Drain to source ON-resistance RDS(on) ()
120 ID=10mA 100
10
100
8
Drain current ID (mA)
Ta=-25C 80 25C 75C 60
80
6 Coss 4 Ciss 2 Crss 0 1 3 10 30 100 300 1000
60 Ta=75C 40 25C -25C 20
40
20
0 0 1 2 3 4 5 6
0 0 1 2 3 4 5 6
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
VIN IO
100 30 VO=5V Ta=25C
Input voltage VIN (V)
10 3 1 0.3 0.1 0.03 0.01 0.1
0.3
1
3
10
30
100
Output current IO (mA)
2


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